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Ordering number : ENN6899
CPH5802
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH5802
DC / DC Converter Applications
Features
Composite type with a P-Channel Sillicon MOSFET (MCH3306) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * Ultralow voltage drive (1.8V drive). [SBD] * Short reverse recovery time. * Low forward voltage.
*
Package Dimensions
unit : mm 2171
[CPH5802]
2.9
5
4
3
0.6
1
0.95
2
0.4
0.6
1.6
2.8
0.05
0.7
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.2
0.4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit Symbol Conditions Ratings Unit
0.9
0.2
0.15
--20
10 --2 --8 0.9 150 --55 to +125
V V A A W C C
Marking : QC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3048 No.6899-1/5
CPH5802
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0.8mm) 15 0.30 0.35 42 15 110 0.35 0.40 500 V V V A pF ns C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS=8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-2A VDS=--10V, VGS=--10V, ID=-2A VDS=--10V, VGS=--10V, ID=-2A IS=--2A, VGS=0 --0.3 2.1 3.0 110 140 180 410 60 40 9 27 42 38 10 0.6 1.2 --0.88 --1.2 145 200 260 --20 --10 10 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Electrical Connection (Top view)
A S G
C
D
Switching Time Test Circuit
[MOSFET]
VIN 0V --4V VIN ID= --1A RL= --10 VOUT VDD= --10V
trr Test Circuit
[SBD]
Duty10%
100mA
50 10s --5V
100
10
D
PW=10s D.C.1%
G
100mA
trr
P.G
50
S
CPH5802 (MOSFET)
No.6899-2/5
10mA
CPH5802
--2.5V
--2.0
ID -- VDS
V --1 .5V --1. 8
--10V --4.0V -3.0V
[MOSFET]
--4.0
ID -- VGS
VDS= --10V
[MOSFET]
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5
--1.6
Drain Current, ID -- A
--1.2
--0.8
VGS= --1.0V
Drain Current, ID -- A
--0.4
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
400
Drain-to-Source Voltage, VDS -- V IT02753 RDS(on) -- VGS [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
400 350 300 250 200 150 100 50 0 --60
Gate-to-Source Voltage, VGS -- V IT02754 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300
--1.0A
250
--0.5A
200 150 100 50 0 0 --2 --4 --6 --8 --10
ID= --0.1A
--1.8V V GS= 0.1A, V I D= -= --2.5 A, V GS = --0.5 ID --4.0V , V GS= = --1.0A ID
--40
--20
0
20
40
25
60 80
C
Ta= 75
C --25 C
100
120
140
160
10
Gate-to-Source Voltage, VGS -- V IT02755 yfs -- ID [MOSFET] VDS= --10V
C 25
Ambient Temperature, Ta -- C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IT02756
IF -- VSD
Forward Transfer Admittance, yfs -- S
7 5 3 2
[MOSFET] VGS=0
1.0 7 5 3 2
Ta =7 5 25 C C
--0.3 --0.4 --0.5 --0.6
5C --2 a= T C 75
Forward Current, IF -- A
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.01 --0.2
--0.7
--25 C
--0.8 --0.9
--1.0
--1.1
--1.2
Drain Current, ID -- A
1000 7 5
IT02757
SW Time -- ID
[MOSFET]
1000
Diode Forward Voltage, VSD -- V IT02758 [MOSFET] Ciss, Coss, Crss -- VDS f=1MHz Ciss
VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF
7 5 3 2
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 IT02759
td(off)
tf
100 7 5 3 2
tr
td(on)
Coss
Crss
10 --1.0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT02760
No.6899-3/5
CPH5802
--10 --9
VGS -- Qg
VDS= --10V ID= --2A
[MOSFET]
--10 7 5 3 2
ASO
IDP= --8A ID= --2A
[MOSFET] <10s
1m s
Gate-to-Source Voltage, VGS -- V
--8
100s
Drain Current, ID -- A
10
--7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11
m
--1.0 7 5 3 2 --0.1 7 5 3 2
s
0m 10 s
er at io n
D
C
op
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(600mm2!0.8mm) 1unit
5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5
--0.01 --0.01 2 3
Total Gate Charge, Qg -- nC
1.2
IT02761
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT02762
[MOSFET]
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
ce
0.6
ram
ic
bo
ard
(6
0.4
00
mm
2
!0
.8m
0.2
m)
1u
nit
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
3 2 1.0
IT02763
IF -- VF
[SBD]
Reverse Current, IR -- mA
Forward Current, IF -- A
7 5 3
= Ta
12
5C
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5
IR -- VR
Ta=125C
100C
[SBD]
C 25
75C
10 0
2 0.1
C
50
C
50C
25C
5 3 2 0.01 0 0.1
0.2
75
C
0.3
7
0.4
0.5 IT00622
10
15 IT00623
Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W
0.8 0.7 0.6 0.5 0.4
Reverse Voltage, VR -- V
1000 7 5
PF(AV) -- IO
[SBD]
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (1) (3) (2) (4)
3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 2 IT00625
Rectangular wave
0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 180 360 1.0 1.2 1.4 IT00624
Sine wave
360
10
Average Forward Current, IO -- A
Reverse Voltage, VR -- V
No.6899-4/5
CPH5802
12
IS -- t
Is 20ms t
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
6
4
2
0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
IT00626
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice.
PS No.6899-5/5

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